FinFET is the most promising double-gate transistor architecture to extend scaling over
planar device. We present a high-performance and low-power FinFET module at 25 nm gate …

We examine whether dynamic impacts of banks and stock markets on economic growth are
related to the level of country development. Using annual data from 15 industrial and 15 …

We show that FinFET, a leading transistor architecture candidate of choice for high
performance CPU applications, can also be extended for general purpose SoC applications by …

In this study, a novel material CaCu 3 Ti 4 O 12 (CCTO), for resistance random access memory
application, was prepared by sol–gel method and annealed at various temperatures. The …

Phosphors used in CRTs have been coated with In 2 O 3 conductive layer derived from the
hydrolysis of indium chloride. It was found that brightness of the phosphors rises initially with …

In this study, changes in the borrower–lender relationship prior to and after the Asian crisis
are examined. We find the lender quality is the most important determinant of the information …

We examine opportunistic behavior of initial public offering (IPO) firms in Taiwan where they
are required to disclose their own earnings forecasts and are unrestricted in releasing news …

A transparent cosputtered ITO–ZnO film was used as an ohmic contact electrode to the n-type
ZnO layer. The contact resistance of the ITO–ZnO/n-ZnO contact system was optimized by …

CaCu 3 Ti 4 O 12 (CCTO) thin films with various thicknesses were prepared by a sol–gel
multiple coating processes on Pt/Ti/SiO 2 /Si substrates. Microstructures and surface …

A novel material CaCu 3 Ti 4 O 12 (CCTO) for resistive random access memory (RRAM)
application was prepared by sol-gel spin coating method. Our previous studies indicated that …